Electronic Devices and Circuits Theory-Semiconductor Questions and Answers
Electronic Devices and Circuits Theory–Semiconductor questions with answers are an essential part of electronics aptitude and competitive exams like GATE, ISRO, DRDO, and BARC. These aptitude questions and answers with explanations help students understand how semiconductors function in electronic circuits, including diodes, transistors, and PN junction theory. Practicing aptitude questions with solutions PDF versions allows learners to strengthen their problem-solving and analytical thinking in semiconductor physics. For aspirants preparing for placement tests or technical interviews, mastering semiconductor basics is crucial for scoring high and building solid conceptual clarity. Explore these aptitude test practice online sets to enhance your preparation effectively.
Electronic Devices and Circuits Theory-Semiconductor
11. Effectively, how many valence electrons are there in each atom within a silicon crystal?
- 2
- 4
- 8
- 16
12. The boundary between p-type material and n-type material is called
- a diode.
- a reverse-biased diode.
- a pn junction.
- a forward-biased diode.
13. You have an unknown type of diode in a circuit. You measure the voltage across it and find it to be 0.3 V. The diode might be
- a silicon diode.
- a germanium diode.
- a forward-biased silicon diode.
- a reverse-biased germanium diode.
14. An ideal diode presents a(n) ________ when reversed-biased and a(n) ________ when forward-biased.
- open, short
- short, open
- open, open
- short, short
15. A reverse-biased diode has the ________ connected to the positive side of the source, and the ________ connected to the negative side of the source.
- cathode, anode
- cathode, base
- base, anode
- anode, cathode
16. What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?
- bivalent
- octavalent
- pentavalent
- trivalent
17. What factor(s) do(es) the barrier potential of a pn junction depend on?
- type of semiconductive material
- the amount of doping
- the temperature
- all of the above
19. Reverse breakdown is a condition in which a diode
- is subjected to a large reverse voltage.
- is reverse-biased and there is a small leakage current.
- has no current flowing at all.
- is heated up by large amounts of current in the forward direction.
20. There is a small amount of current across the barrier of a reverse-biased diode. This current is called
- forward-bias current.
- reverse breakdown current.
- conventional current.
- reverse leakage current.