Electronic Devices and Circuit Theory-Field-Effect Transistors Questions and Answers
Field-Effect Transistors (FETs) are core components in modern electronic circuits. This section includes field-effect transistors questions with answers curated for GATE, BEL, and DRDO electronics exams. Covering JFETs, MOSFETs, and their working principles, these aptitude questions and answers with explanations guide you through biasing, transfer characteristics, and amplifier design. Each solution includes step-by-step reasoning to strengthen your understanding of electronic device operation and enhance exam readiness.
Electronic Devices and Circuit Theory-Field-Effect Transistors
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30 questions
1. For a JFET, the value of VDS at which ID becomes essentially constant is the
- pinch-off voltage.
- cutoff voltage.
- breakdown voltage.
- ohmic voltage.
2. The ________ has a physical channel between the drain and source.
- D-MOSFET
- E-MOSFET
- V-MOSFET
- [NIL]
3. A self-biased n-channel JFET has a VD = 6 V. VGS = –3 V. Find the value of VDS.
- –3 V
- –6 V
- 3 V
- 6 V
4. What type(s) of gate-to-source voltage(s) can a depletion MOSFET (D-MOSFET) operate with?
- zero
- positive
- negative
- any of the above
5. Midpoint bias for a D-MOSFET is ID = ________, obtained by setting VGS = 0.
- IDSS / 2
- IDSS / 3.4
- IDSS
6. On the drain characteristic curve of a JFET for VGS = 0, the pinch-off voltage is
- below the ohmic area.
- between the ohmic area and the constant current area.
- between the constant current area and the breakdown region.
- above the breakdown region.
7. Which of the following devices has the highest input resistance?
- diode
- JFET
- MOSFET
- bipolar junction transistor
8. The value of VGS that makes ID approximately zero is the
- pinch-off voltage.
- cutoff voltage.
- breakdown voltage.
- ohmic voltage.
9. The JFET is always operated with the gate-source pn junction ________ -biased.
- forward
- reverse
10. All MOSFETs are subject to damage from electrostatic discharge (ESD).
- true
- false