Electronic Devices and Circuit Theory-Field-Effect Transistors Questions and Answers
Field-Effect Transistors (FETs) are core components in modern electronic circuits. This section includes field-effect transistors questions with answers curated for GATE, BEL, and DRDO electronics exams. Covering JFETs, MOSFETs, and their working principles, these aptitude questions and answers with explanations guide you through biasing, transfer characteristics, and amplifier design. Each solution includes step-by-step reasoning to strengthen your understanding of electronic device operation and enhance exam readiness.
Electronic Devices and Circuit Theory-Field-Effect Transistors
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30 questions
21. When biased as a variable resistor, JFET resistance (RDS) increases as VGS becomes more negative.
- TRUE
- FALSE
22. The arrow on the schematic symbol for a MOSFET indicates the channel material type.
- TRUE
- FALSE
23. It is not necessary to exercise any particular care in handling a MOSFET.
- TRUE
- FALSE
24. The Q-point in a JFET with voltage-divider bias is more stable than in a self-biased JFET.
- TRUE
- FALSE
25. One advantage of a JFET over the BJT is its high input resistance.
- TRUE
- FALSE
26. An E-MOSFET can be operated with either positive or negative values of VGS.
- TRUE
- FALSE
28. The JFET operates with a reverse-biased pn junction (gate-to source).
- TRUE
- FALSE