Semiconductor Principles Questions and Answers
The Semiconductor Principles form the foundation of modern electronics, explaining how materials like silicon and germanium conduct electricity. This section includes semiconductor aptitude questions and answers with explanations, focusing on topics like energy bands, doping, charge carriers, and PN junctions. Designed for aspirants preparing for GATE, ISRO, or DRDO exams, these questions help in understanding theoretical and practical aspects of semiconductors. Practice these semiconductor principle questions with answers to strengthen your grasp of electronics fundamentals and prepare effectively for competitive technical exams.
Semiconductor Principles
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63 questions
51. Forward bias of a silicon P-N junction will produce a barrier voltage of approximately how many volts?
- 0.2
- 0.3
- 0.7
- 0.8
52. Which semiconductor material is made from coal ash?
- germanium
- silicon
- tin
- carbon
53. When and who discovered that more than one transistor could be constructed on a single piece of semiconductor material:
- 1949, William Schockley
- 1955, Walter Bratten
- 1959, Robert Noyce
- 1960, John Bardeen
54. When is a P-N junction formed?
- in a depletion region
- in a large reverse biased region
- the point at which two opposite doped materials come together
- whenever there is a forward voltage drop
55. A P-N junction mimics a closed switch when it:
- has a low junction resistance
- is reverse biased
- cannot overcome its barrier voltage
- has a wide depletion region
56. Solid state devices were first manufactured during:
- World War 2
- 1904
- 1907
- 1960
57. Electron pair bonding occurs when atoms:
- lack electrons
- share holes
- lack holes
- share electrons
59. What is a type of doping material?
- extrinsic semiconductor material
- pentavalent material
- n-type semiconductor
- majority carriers
60. Minority carriers are many times activated by:
- heat
- pressure
- dopants
- forward bias